Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Arwa Saud Abbas; Abdulrhman Faraj M Hiazaa; Abdullah Jalalah; Mohammed Alkhamisah; Rasheed Alrasheed; Fadhl S Alfadhl; Ghadeer H Aljalham; Fatimah Basem

doi:10.21467/anr.6.1.29-43

Authors

Arwa Saud Abbas King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia https://orcid.org/0000-0003-3282-2255
Abdulrhman Faraj M Hiazaa King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia https://orcid.org/0009-0004-5811-1640
Abdullah Jalalah King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia https://orcid.org/0009-0004-4675-2707
Mohammed Alkhamisah King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia https://orcid.org/0009-0002-2107-671X
Rasheed Alrasheed King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia
Fadhl S Alfadhl King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia
Ghadeer H Aljalham King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia
Fatimah Basem King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia https://orcid.org/0009-0009-4697-4306

DOI:

https://doi.org/10.21467/anr.6.1.29-43

Abstract

The present research addresses the synthesis of carbon materials thin films by RF-PECVD in N₂/CH₄ gas mixture. Carbon materials film was formed at 40/48 sccm of CH₄/N₂ of the total gas flow rate ratio CH₄/CH₄+N₂ = 0.45 and 200/100 W HF/LF power at a deposition temperature of 350 ^oC and 1000 mTorr pressure. Then, post-annealing of carbon materials film took place at 400 ^oC by means of RTA under N₂ flow. The formation of carbon nanostructures was investigated by scanning electron microscopy, energy dispersive X-ray, Raman spectroscopy, and atomic force microscopy, respectively. AFM shows that the films consisted of nanocrystalline grains. The surface morphology and structural characteristics of materials were studied as a gas flow function and substrate temperature. EDX results indicated the carbon presence, and Raman spectroscopy analysis revealed two broad bands: D-band 1381.64 cm⁻¹ and G-band 1589.42 cm⁻¹. The temperature-dependent post-annealing of carbon materials plays a key role in the graphite crystallites growth at high substrate temperatures. Our results indicate carbon materials incorporation for laser diode applications.

Keywords:

Carbon materials, Transparent conducting oxide of tin-doped In2O3, Wide bandgap semiconductor

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