Excitonic States and Related Optical Susceptibility in  InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

Fathallah  Jabouti; Haddou El Ghazi; Redouane En-nadir; Izeddine Zorkani; Anouar Jorio

doi:10.21467/anr.4.1.1-9

Authors

Fathallah Jabouti Department of physics, Faculty of science, Sidi Mohamed Ben Abdellah University https://orcid.org/0000-0002-3632-618X
Haddou El Ghazi ENSAM Laboratory, Hassan II University, Casablanca https://orcid.org/0000-0002-2139-2360
Redouane En-nadir University of Sidi Mohamed Ben Abdellah (USMBA) https://orcid.org/0000-0002-5064-0028
Izeddine Zorkani Sidi Mohamed Ben Abdellah University (USMBA)
Anouar Jorio Department of physics, Faculty of science, Sidi Mohamed Ben Abdellah University

DOI:

https://doi.org/10.21467/anr.4.1.1-9

Abstract

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity (D⁺, X) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).

Keywords:

Quantum well, Exciton-states, Binding energy, Susceptibility

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