Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position
Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity (D+, X) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).
Keywords:Quantum well, Exciton-states, Binding energy, Susceptibility
F. Schweiner, J. Main, and G. Wunner, ‘Linewidths in excitonic absorption spectra of cuprous oxide’, Phys. Rev. B, vol. 93, no. 8, p. 085203, 2016.
M. Van der Donck, M. Zarenia, and F. M. Peeters, ‘Excitons, trions, and biexcitons in transition-metal dichalcogenides: magnetic-field dependence’, Phys. Rev. B, vol. 97, no. 19, p. 195408, 2018.
T. Kazimierczuk, D. Fröhlich, S. Scheel, H. Stolz, and M. Bayer, ‘Giant Rydberg excitons in the copper oxide Cu 2 O’, Nature, vol. 514, no. 7522, pp. 343–347, 2014.
A. Alvermann and H. Fehske, ‘Exciton mass and exciton spectrum in the cuprous oxide’, J. Phys. B At. Mol. Opt. Phys., vol. 51, no. 4, p. 044001, 2018.
F. Schöne et al., ‘Deviations of the exciton level spectrum in Cu 2 O from the hydrogen series’, Phys. Rev. B, vol. 93, no. 7, p. 075203, 2016.
G. Wang et al., ‘Colloquium: Excitons in atomically thin transition metal dichalcogenides’, Rev. Mod. Phys., vol. 90, no. 2, p. 021001, 2018.
P. S. Grigoryev et al., ‘Excitons in asymmetric quantum wells’, Superlattices Microstruct., vol. 97, pp. 452–462, 2016.
B. Laikhtman, ‘Direct and indirect exciton mixture in double quantum wells’, EPL Europhys. Lett., vol. 123, no. 6, p. 67001, 2018.
E. A. Koval and O. A. Koval, ‘Excited states of two-dimensional hydrogen atom in tilted magnetic field: Quantum chaos’, Phys. E Low-Dimens. Syst. Nanostructures, vol. 93, pp. 160–166, 2017.
R. P. Seisyan, A. V. Kavokin, K. Moumanis, and M. E. Sasin, ‘Effect of a Coulomb well in (In, Ga) As/GaAs quantum wells’, Phys. Solid State, vol. 59, no. 6, pp. 1154–1170, 2017.
P. S. Grigoryev et al., ‘Exciton-light coupling in (In, Ga) As/GaAs quantum wells in a longitudinal magnetic field’, Phys. Rev. B, vol. 96, no. 15, p. 155404, 2017.
R. Harris, J. Terblans, and H. Swart, ‘Exciton binding energy in an infinite potential semiconductor quantum well–wire heterostructure’, Superlattices Microstruct., vol. 86, pp. 456–466, 2015.
S. Wu, L. Cheng, and Q. Wang, ‘Excitonic effects and related properties in semiconductor nanostructures: roles of size and dimensionality’, Mater. Res. Express, vol. 4, no. 8, p. 085017, 2017.
M. Y. Gubin, A. V. Shesterikov, S. N. Karpov, and A. V. Prokhorov, ‘Entangled plasmon generation in nonlinear spaser system under the action of external magnetic field’, Phys. Rev. B, vol. 97, no. 8, p. 085431, 2018.
Y. Z. Han and C. S. Liu, ‘The nontrivial topological phases of indirect excitons in semiconductor coupled quantum wells’, Phys. E Low-Dimens. Syst. Nanostructures, vol. 108, pp. 116–122, 2019.
V. A. Stephanovich, E. Y. Sherman, N. T. Zinner, and O. V. Marchukov, ‘Energy-level repulsion by spin-orbit coupling in two-dimensional Rydberg excitons’, Phys. Rev. B, vol. 97, no. 20, p. 205407, 2018.
C. Abbas et al., ‘Spin relaxation of indirect excitons in asymmetric coupled quantum wells’, Superlattices Microstruct., vol. 122, pp. 643–649, 2018.
S. I. Tsintzos et al., ‘Electrical tuning of nonlinearities in exciton-polariton condensates’, Phys. Rev. Lett., vol. 121, no. 3, p. 037401, 2018.
M. D. Fraser, ‘Coherent exciton-polariton devices’, Semicond. Sci. Technol., vol. 32, no. 9, p. 093003, 2017.
M. Combescot, R. Combescot, and F. Dubin, ‘Bose–Einstein condensation and indirect excitons: a review’, Rep. Prog. Phys., vol. 80, no. 6, p. 066501, 2017.
A. S. Bolshakov et al., ‘Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells’, J. Appl. Phys., vol. 121, no. 13, p. 133101, 2017.
S. Gies, B. Holz, C. Fuchs, W. Stolz, and W. Heimbrodt, ‘Recombination dynamics of type-II excitons in (Ga, In) As/GaAs/Ga (As, Sb) heterostructures’, Nanotechnology, vol. 28, no. 2, p. 025701, 2016.
Y. Chen et al., ‘Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state’, J. Appl. Phys., vol. 121, no. 10, p. 103101, 2017.
A. J. Peter and C. W. Lee, ‘Binding energy and radiative lifetime of an exciton in a type-II quantum well’, Phys. Scr., vol. 85, no. 1, p. 015704, 2011.
J. Wilkes and E. A. Muljarov, ‘Excitons and polaritons in planar heterostructures in external electric and magnetic fields: A multi-sub-level approach’, Superlattices Microstruct., vol. 108, pp. 32–41, 2017.
P. A. Belov, ‘Energy spectrum of excitons in square quantum wells’, Phys. E Low-Dimens. Syst. Nanostructures, vol. 112, pp. 96–108, 2019.
H. El Ghazi and A. J. Peter, ‘Built-in electric field effect on optical absorption spectra of strained (In, Ga) N–GaN nanostructures’, Phys. B Condens. Matter, vol. 470, pp. 64–68, 2015
How to Cite
Copyright (c) 2021 Fathallah Jabouti , Haddou El Ghazi, Redouane En-nadir, Izeddine Zorkani, Anouar Jorio
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
The author(s) retains full copyright of their article and grants non-exclusive publishing right to Advanced Nano Research and its publisher AIJR (India). Author(s) can archive pre-print, post-print, and published version/PDF to any open access, institutional repository, social media, or personal website provided that Published source must be acknowledged with citation and link to publisher version.
Click here for more information on Copyright policy
Click here for more information on Licensing policy