Variations in Optical Properties of ZnS/Cu/ZnS Nanostructures Due to Thickness Change of ZnS Cap Layer

Authors

  • Haidar Howari Department of Physics, Deanship of Educational Services, Qassim University, Buraidah
  • Islam Uddin Department of Physics, Deanship of Educational Services, Qassim University

DOI:

https://doi.org/10.21467/jmm.2.1.25-30

Abstract

Nanostructures of ZnS/Cu/ZnS were deposited on glass substrate using physical vapor deposition technique. The thickness of the first and last ZnS layers was altered, while the thickness of the embedded Cu layer was fixed at 50 nm. The produced nanostructures were of good quality. Spectrophotometric measurements were carried out on the nanostructures to investigate the optical properties. The transmission and reflectivity spectra were recorded and studied in detail. ZnS was selected due to its high refractive index, ease of deposition, and low cost. The copper layer was used because of its low absorption in the visible part of the spectrum and its thermal stability. The ZnS layer was found not only to anti-reflective the Cu layer, but also to stabilize the nanostructure, improve its adherence on glass substrate, and increase the film thermal resistance up to 240 °C. Furthermore, all the samples exhibit good thermal stability up to 240 °C upon annealing for two hours.

Keywords:

Optical properties, Transmission, Coating, Annealing, Nanostructures

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References

M. Zulfequar, A. A. Bahishti, and I. Uddin, “Laser Irradiation Effect on the Optical Band Gap of Se-Te-Al Thin Films,” Int. Ann. Sci., vol. 1, no. 1, pp. 8–14, Oct. 2016.

I. Uddin, H. HOWARI, and G. A. ANSARI, “laser irradiation effect on the optical properties of a-se88te12-xalx thin films,” Chalcogenide Lett., vol. 13, no. 3, pp. 117–125, 2016.

A. A. Bahishti, I. Uddin, M. Zulfequar, and T. Alharbi, “Laser Irradiation Effect on the Optical Band Gap of Se96-xTe4Hgx Thin Films,” J. Mod. Mater., vol. 1, no. 1, pp. 17–23, Jul. 2016.

M. Fahland, P. Karlsson, and C. Charton, “Low resisitivity transparent electrodes for displays on polymer substrates,” in Thin Solid Films, 2001, vol. 392, no. 2, pp. 334–337.

Y. H. Tak, K. B. Kim, H. G. Park, K. H. Lee, and J. R. Lee, “Criteria for ITO (indium-tin-oxide) an organic light thin film as the bottom electrode of emitting diode,” Thin Solid Films, vol. 411, pp. 12–16, 2002.

H. S. Ullal, K. Zweibel, and B. Von Roedern, “Polycrystalline thin film photovoltaics: Research, development, and technologies,” Conf. Rec. Twenty-Ninth IEEE Photovolt. Spec. Conf. 2002., no. May, pp. 472–477, 2002.

D. R. Sahu, S.-Y. Lin, and J.-L. Huang, “ZnO/Ag/ZnO multilayer films for the application of a very low resistance transparent electrode,” Appl. Surf. Sci., vol. 252, no. 20, pp. 7509–7514, 2006.

D. R. Sahu and J.-L. Huang, “High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature,” Thin Solid Films, vol. 515, no. 3, pp. 876–879, 2006.

D. R. Sahu and J. L. Huang, “Design of ZnO/Ag/ZnO multilayer transparent conductive films,” Mater. Sci. Eng. B Solid-State Mater. Adv. Technol., vol. 130, no. 1–3, pp. 295–299, 2006.

K. L. Chopra, S. Major, and D. K. Pandya, “Transparent conductors-A status review,” Thin Solid Films, vol. 102, no. 1. pp. 1–46, 1983.

S. Takata, T. Minami, and H. Nanto, “The stability of aluminium-doped ZnO transparent electrodes fabricated by sputtering,” Thin Solid Films, vol. 135, no. 2, pp. 183–187, 1986.

M. Bender, W. Seelig, C. Daube, H. Frankenberger, B. Ocker, and J. Stollenwerk, “Dependence on oxygen flow on optical and electrical properties of DC-magnetron sputtered ITO films,” Thin Solid Films, vol. 326, pp. 72–77, 1998.

S.-S. Lin, J.-L. Huang, and D.-F. Lii, “Effect of substrate temperature on the properties of Ti-doped ZnO films by simultaneous rf and dc magnetron sputtering,” Mater. Chem. Phys., vol. 90, no. 1, pp. 22–30, 2005.

G. Leftheriotis, P. Yianoulis, and D. Patrikios, “Deposition and optical properties of optimised ZnS/Ag/ZnS thin films for energy saving applications,” Thin Solid Films, vol. 306, no. 1, pp. 92–99, 1997.

X. Liu, X. Cai, J. Qiao 1, J. Mao, and N. Jiang 1, “The design of ZnS/Ag/ZnS transparent conductive multilayer films,” Thin Solid Films, vol. 441, no. 1, pp. 200–206, 2003.

D. R. Sahu and J. L. Huang, “Characteristics of ZnO-Cu-ZnO multilayer films on copper layer properties,” Appl. Surf. Sci., vol. 253, no. 2, pp. 827–832, 2006.

D. R. Sahu and J. L. Huang, “Dependence of film thickness on the electrical and optical properties of ZnO-Cu-ZnO multilayers,” Appl. Surf. Sci., vol. 253, no. 2, pp. 915–918, 2006.

D. R. Sahu and J. L. Huang, “Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures,” Microelectronics J., vol. 38, no. 3, pp. 299–303, 2007.

H. Howari, “Pulsed laser Annealing of CdTe/Cd1-xMnxTe Epilayers and Pulsed laser Emission of ZnS/Zn1-xCdxS Quantum Well Structures,” The University of Hull, pp. 4, 1999.

D. R. Sahu and J. L. Huang, “The properties of ZnO/Cu/ZnO multilayer films before and after annealing in the different atmosphere,” Thin Solid Films, vol. 516, no. 2–4, pp. 208–211, 2007.

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Published

2016-10-26

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Research Article

How to Cite

[1]
H. Howari and I. Uddin, “Variations in Optical Properties of ZnS/Cu/ZnS Nanostructures Due to Thickness Change of ZnS Cap Layer”, J. Mod. Mater., vol. 2, no. 1, pp. 25–30, Oct. 2016.

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