Laser Irradiation Effect on the Optical Band Gap of Se96-xTe4Hgx Thin Films

Adam A Bahishti; Islam Uddin; M Zulfequar; T Alharbi

doi:10.21467/jmm.1.1.17-23

Authors

Adam A Bahishti Department of Physics, College of Science Al-Zulfi, Majmaah University, KSA
Islam Uddin Department of Physics, Deanship of Educational Services, Qassim University
M Zulfequar Department of Physics, Jamia Millia Islamia, New Delhi
T Alharbi Department of Physics, College of Science Al-Zulfi, Majmaah University, KSA

DOI:

https://doi.org/10.21467/jmm.1.1.17-23

Abstract

The effect of laser irradiation on the optical band gap of Se_96-xTe₄Hg_x thin films has been studied. Thin films of thickness 300 nm have been deposited on glass substrate by using thermal evaporation technique. The result shows that irradiation causes a red shift in the absorption edge and hence optical band gap decreases with increasing irradiation time. The results have been analyzed on the basis of laser irradiation-induced defects in the film. Furthermore, optical band gap has found to decrease by increasing mercury concentration and optical band gap decreases rapidly with a higher concentration of mercury.

Keywords:

Laser Irradiation, Chalcogen alloys, Thin films, Irradiation effect, optical band gap

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