EN-NADIR, R.; EL GHAZI, H.; JORIO, A.; ZORKANI, I. Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects. Journal of Modeling and Simulation of Materials, [S. l.], v. 4, n. 1, p. 1–6, 2021. DOI: 10.21467/jmsm.4.1.1-6. Disponível em: https://journals.aijr.org/index.php/jmsm/article/view/3572. Acesso em: 29 mar. 2024.