Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects


  • Redouane En-nadir LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco
  • Haddou El Ghazi ENSAM Laboratory, ENSAM, Hassan II University, Casablanca, Morocco
  • Anouar Jorio LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco
  • Izeddine Zorkani LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco



In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.


Binding Energy, Finite Confinement Potential, Double QWs, Temperature and Impurity


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Research Article

How to Cite

R. En-nadir, H. El Ghazi, A. Jorio, and I. Zorkani, “Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects”, J. Mod. Sim. Mater., vol. 4, no. 1, pp. 1–6, Mar. 2021.